| PART |
Description |
Maker |
| V54C3128404VT |
128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
|
Mosel Vitelic Corp
|
| V54C3128 |
128Mbit SDRAM 3.3 VOLT, BGA PACKAGE
|
Mosel Vitelic, Corp.
|
| V54C3256164VALT6 V54C3256804VAT V54C3256404VAT V54 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 56Mbit SDRAM.3伏，第二的TSOP /系统芯片的BGA / WBGA包装16米x 162 × 84米4
|
Mosel Vitelic, Corp.
|
| K4D28163HD K4D28163HD-TC36 K4D28163HD-TC40 K4D2816 |
128Mbit DDR SDRAM 128Mbit DDR SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY57V561620HLT HY57V561620HT-H |
x16 SDRAM
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix
|
| K4S161622H |
16Mb H-die SDRAM Specification
IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
|
Samsung semiconductor
|
| K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM48S16030AT-G_F8 KM48S16030AT-G_FH KM48S16030AT-G |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung semiconductor
|
| GM72V66841 GM72V66841ET GM72V66841ELT-75 GM72V6684 |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
From old datasheet system
IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
x8 SDRAM x8 SDRAM内存
|
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| MAX8868EUK33-T MAX8867EUK30-T |
VOLT REGULATOR|FIXED| 3.3V|CMOS|TSOP|6PIN|PLASTIC
VOLT REGULATOR|FIXED| 3V|CMOS|TSOP|6PIN|PLASTIC 3 V FIXED POSITIVE LDO REGULATOR, 0.12 V DROPOUT, PDSO5
|
Maxim Integrated Products, Inc.
|
| HYB39S128400CT-7 HYB39S128160CT-7 HYB39S128800CT-7 |
128Mbit Synchronous DRAMs
SDRAM Components - 128Mb (16Mx8) PC133 3-3-3
SDRAM Components - 128Mb (8Mx16) PC133 3-3-3
SDRAM Components - 128Mb (32Mx4) PC133 3-3-3
128-MBit Synchronous DRAM
|
Infineon
|
| K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S2 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费（符合RoHS
CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
